Document Details

Document Type : Article In Journal 
Document Title :
“Substrate and annealing temperature on the optical and electrical properties of Ge20Te80 films”
تأثير درجة حرارة أسطح الترسيب والتخمير على الخصائص الضوئية والكهربية لأفلام الجرمانيوم تليريوم
 
Subject : Surface Engineering, Surface Instrumentation & Vacuum Technology--- Physics 
Document Language : English 
Abstract : Ge20Te80 films were deposited by thermal evaporation technique onto chemically cleaned glass substrates kept at different substrate temperatures (Tsub = 203; 233 and 273 K). The optical data indicated that the width of the localized states tails (Ee) increases while the optical gap (Eo) decreases with increasing the substrate and annealing temperature of the investigated films. From the electrical measurements, the activation energy for conduction and the density of localized states at the Fermi energy, N)EF) were obtained. The effects of the substrate and annealing temperature on the width of localized states tails and on the density of localized states at the Fermi level have enhanced each other. The changes in the optical and electrical properties are correlated with the amorphous–crystalline transformations. 
ISSN : 0042-207x 
Journal Name : Vacuum 
Volume : 72 
Issue Number : 2 
Publishing Year : 1426 AH
2004 AD 
Article Type : Article 
Added Date : Tuesday, December 28, 2010 

Researchers

Researcher Name (Arabic)Researcher Name (English)Researcher TypeDr GradeEmail
فريد محمد عبد الرحيم محمد عبد الرحيمAbdel-Rahim, Farid MohammadResearcherDoctoratefarid.elkhateb@gmail.com

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